TY  - BOOK
AU  - Sale,T.E.
TI  - Vertical cavity surface emitting lasers
T2  - Electronic & electrical engineering research studies
SN  - 0863801749
AV  - TA1700 .S24 1995
PY  - 1995///]
CY  - Taunton, Somerset, England
PB  - Research Studies Press
KW  - Semiconductor lasers
N1  - Includes bibliographical references and index; Contents; Preface; 1.Introduction; 1.1. Background topics; 1.2. Lasers for optical computing; 1.3.Development of the surface emitting laser; 1.4.Devices in other material systems; 1.5.VCSEL development; 2.Theory of dielectric reflectors and VCSEL cavities; 2.1.Bragg reflector theory; 2.2.AIAs / GaAs reflector stacks; 2.3.Design of laser structure; 2.4.Conclusions; 3.Gain calculations for strained InGaAs / GaAs quantum wells; 3.1.Basic theory of optically assisted transitions; 3.2.Band structure of strained InGaAs quantum wells; 3.3.Details of gain calculations; 3.4.Calculations; 4.Materials growth and device fabrication; 4.1.Growth; 4.2.Comparisons of MBE and MOCVD; 4.3.Fabrication of devices; 5.Resistance considerations for Bragg reflectors; 5.1.Heterointerfaces; 5.2.Heterojunctions under bias; 5.3.I/V Characteristics of real Bragg reflectors; 5.4.Optical considerations; 6.Case Study I: Measurements on MBE grown devices; 6.1.Structure; 6.2.Material assessment; 6.3.Experimental method; 6.4.Measurements on etched mesa devices; 6.5.Polyimide passivated devices; 6.6.Ion implanted devices; 7.Case Study II: Measurements on MOCVD grown devices; 7.1.Growth structure; 7.2.Material assessment; 7.3.Processing; 7.4.Measurements on etched mesa devices; 7.5.C.W. operation; 7.6.Ion implanted devices; 8.Analysis of experimental data; 8.1.Threshold conditions; 8.2.Thermal modelling; 8.3.Operating power range; 8.4.Reflector resistance; 9.Further issues; 9.1.Controlling spontaneous emission; 9.2.Modulation speed; 9.3.Noise; 9.4.Integration I: arrays; 9.5.Integration II: functional devices; 9.6.Thermal and output power limitations; Index
ER  -