Vertical cavity surface emitting lasers / T.E. Sale.

Includes bibliographical references and index.

Contents Preface 1.Introduction 1.1. Background topics 1.2. Lasers for optical computing 1.3.Development of the surface emitting laser 1.4.Devices in other material systems 1.5.VCSEL development 2.Theory of dielectric reflectors and VCSEL cavities 2.1.Bragg reflector theory 2.2.AIAs / GaAs reflector stacks 2.3.Design of laser structure 2.4.Conclusions 3.Gain calculations for strained InGaAs / GaAs quantum wells 3.1.Basic theory of optically assisted transitions 3.2.Band structure of strained InGaAs quantum wells 3.3.Details of gain calculations 3.4.Calculations 4.Materials growth and device fabrication 4.1.Growth 4.2.Comparisons of MBE and MOCVD 4.3.Fabrication of devices 5.Resistance considerations for Bragg reflectors 5.1.Heterointerfaces 5.2.Heterojunctions under bias 5.3.I/V Characteristics of real Bragg reflectors 5.4.Optical considerations 6.Case Study I: Measurements on MBE grown devices 6.1.Structure 6.2.Material assessment 6.3.Experimental method 6.4.Measurements on etched mesa devices 6.5.Polyimide passivated devices 6.6.Ion implanted devices 7.Case Study II: Measurements on MOCVD grown devices 7.1.Growth structure 7.2.Material assessment 7.3.Processing 7.4.Measurements on etched mesa devices 7.5.C.W. operation 7.6.Ion implanted devices 8.Analysis of experimental data 8.1.Threshold conditions 8.2.Thermal modelling 8.3.Operating power range 8.4.Reflector resistance 9.Further issues 9.1.Controlling spontaneous emission 9.2.Modulation speed 9.3.Noise 9.4.Integration I: arrays 9.5.Integration II: functional devices 9.6.Thermal and output power limitations Index