| 000 | 01132 am a2200337 i 4500 | ||
|---|---|---|---|
| 003 | BAUN | ||
| 008 | 940124s1993 enka b 001 0 eng d | ||
| 010 | _a 94172690 | ||
| 020 | _a0852968655 | ||
| 035 | _a(OCoLC)29674706 | ||
| 040 |
_aMiU _cMiU _dUk _dIU _dOCU _dDLC _dBAUN _erda _beng |
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| 049 | _aBAUN_MERKEZ | ||
| 050 | 0 | 4 |
_aQC611.8.G3 _bP76 1993 |
| 082 | 0 | 0 | _220 |
| 245 | 0 | 0 |
_aProperties of lattice-matched and strained indium gallium arsenide / _cedited by Pallab Bhattacharya. |
| 264 | 1 |
_aLondon : _bINSPEC, Institution of Electrical Engineers, _c[1993] |
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| 264 | 4 | _c©1993 | |
| 300 |
_axxi, 317 pages : _billustrations ; _c29 cm. |
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| 336 |
_2rdacontent _atext _btxt |
||
| 337 |
_2rdamedia _aunmediated _bn |
||
| 338 |
_2rdacarrier _avolume _bnc |
||
| 490 | 1 |
_aEMIS datareviews series ; _vno.8 |
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| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 | _aGallium arsenide semiconductors. | |
| 650 | 0 | _aIndium alloys. | |
| 700 | 1 | _aBhattacharya, Pallab. | |
| 710 | 2 | _aINSPEC (Information service) | |
| 830 | 0 |
_9109568 _aEMIS datareviews series ; _v8 |
|
| 900 | _a5960 | ||
| 942 |
_2lcc _cKT |
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| 999 |
_c4942 _d4942 |
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