000			02779 am a2200313 i 4500
001			6540
005			20250325133919.0
008			950412s1995 enka b 001 0 eng
010			_a95014959
020			_a0863801749 _qResearch Studies Press : alk. paper
020			_a0471957402 _qWiley : alk. paper
040			_aDLC _cDLC _dDLC _dBAUN _erda
041	0		_aeng
049			_aBAUN_MERKEZ
050	0	4	_aTA1700 _b.S24 1995
082	0	0	_220
100	1		_aSale, T. E. _q(Terence Edward), _d1968- _992967 _eaut
245	1	0	_aVertical cavity surface emitting lasers / _cT.E. Sale.
264		1	_aTaunton, Somerset, England : _bResearch Studies Press ; _c[1995]
264		1	_aNew York : _bWiley, _c[1995]
264		4	_c©1995
300			_axi, 312 pages : _billustrations ; _c24 cm.
490	1		_aElectronic & electrical engineering research studies. _aOptoelectronics series ; _v2
504			_aIncludes bibliographical references and index.
505	0	0	_tContents _tPreface _t1.Introduction _t1.1. Background topics _t1.2. Lasers for optical computing _t1.3.Development of the surface emitting laser _t1.4.Devices in other material systems _t1.5.VCSEL development _t2.Theory of dielectric reflectors and VCSEL cavities _t2.1.Bragg reflector theory _t2.2.AIAs / GaAs reflector stacks _t2.3.Design of laser structure _t2.4.Conclusions _t3.Gain calculations for strained InGaAs / GaAs quantum wells _t3.1.Basic theory of optically assisted transitions _t3.2.Band structure of strained InGaAs quantum wells _t3.3.Details of gain calculations _t3.4.Calculations _t4.Materials growth and device fabrication _t4.1.Growth _t4.2.Comparisons of MBE and MOCVD _t4.3.Fabrication of devices _t5.Resistance considerations for Bragg reflectors _t5.1.Heterointerfaces _t5.2.Heterojunctions under bias _t5.3.I/V Characteristics of real Bragg reflectors _t5.4.Optical considerations _t6.Case Study I: Measurements on MBE grown devices _t6.1.Structure _t6.2.Material assessment _t6.3.Experimental method _t6.4.Measurements on etched mesa devices _t6.5.Polyimide passivated devices _t6.6.Ion implanted devices _t7.Case Study II: Measurements on MOCVD grown devices _t7.1.Growth structure _t7.2.Material assessment _t7.3.Processing _t7.4.Measurements on etched mesa devices _t7.5.C.W. operation _t7.6.Ion implanted devices _t8.Analysis of experimental data _t8.1.Threshold conditions _t8.2.Thermal modelling _t8.3.Operating power range _t8.4.Reflector resistance _t9.Further issues _t9.1.Controlling spontaneous emission _t9.2.Modulation speed _t9.3.Noise _t9.4.Integration I: arrays _t9.5.Integration II: functional devices _t9.6.Thermal and output power limitations _tIndex
650		0	_aSemiconductor lasers. _997083
830		0	_9108626 _aElectronic & electrical engineering research studies. _pOptoelectronics series ; _v2
942			_2lcc _cKT
999			_c5419 _d5419