| 000 | 00728 am a2200277 i 4500 | ||
|---|---|---|---|
| 001 | 8257 | ||
| 003 | BAU | ||
| 005 | 20250430152352.0 | ||
| 008 | 990803s2000 nyua b 001 0 eng | ||
| 020 | _a0780334795 | ||
| 035 | _a(OCoLC) | ||
| 040 |
_cBAUN _aBAUN _beng _erda |
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| 041 | 0 | _aeng | |
| 049 | _aBAUN_MERKEZ | ||
| 050 | 0 | 4 |
_aTK7871.85 _b.H475 2000 |
| 100 | 1 |
_aHess, Karl _9124117 _eaut |
|
| 245 | 1 | 0 | _aAdvanced theory of semiconductor devices. |
| 264 | 1 |
_aNew York: _bIEEE, _c2000. |
|
| 300 |
_a347 pages ; _c23 cm. |
||
| 336 |
_2rdacontent _atext _btxt |
||
| 337 |
_2rdamedia _aunmediated _bn |
||
| 338 |
_2rdacarrier _avolume _bnc |
||
| 500 | _aIncludes index. | ||
| 650 | 0 |
_aSemiconductors. _926724 |
|
| 942 |
_2lcc _cKT |
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| 999 |
_c6443 _d6443 |
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